Docsity
Docsity

Prepare-se para as provas
Prepare-se para as provas

Estude fácil! Tem muito documento disponível na Docsity


Ganhe pontos para baixar
Ganhe pontos para baixar

Ganhe pontos ajudando outros esrudantes ou compre um plano Premium


Guias e Dicas
Guias e Dicas

Datasheet do transistor y1 (SMD), Manuais, Projetos, Pesquisas de Eletrônica

Esse é o datasheet de um dos transistor mais difíceis de se encontrar e que está presente em diversas maquinas.

Tipologia: Manuais, Projetos, Pesquisas

2019

Compartilhado em 11/09/2019

wrl-manutencao
wrl-manutencao 🇧🇷

4

(4)

3 documentos

1 / 7

Toggle sidebar

Esta página não é visível na pré-visualização

Não perca as partes importantes!

bg1
Dimensions in inches and (millimeters)
SOT-23
.016 (0.4)
.056 (1.43)
.037(0.95) .037(0.95)
max. .004 (0.1)
.122 (3.1)
.016 (0.4) .016 (0.4)
3
12
Top Vi ew
.102 (2.6)
.007 (0.175)
.045 (1.15)
.118 (3.0)
.052 (1.33)
.005 (0.125)
.094 (2.4)
.037 (0.95)
Case: SOT-23 Plastic Package
Weig ht : approx. 0.008 g
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
FEATURES
Small Signal Transistors (NPN)
5/98
Symbol Value Unit
Collector-Base Voltage BC846
BC847
BC848, BC849
VCBO
VCBO
VCBO
80
50
30
V
V
V
Collector-Emitter Voltage BC846
BC847
BC848, BC849
VCES
VCES
VCES
80
50
30
V
V
V
Collector-Emitter Voltage BC846
BC847
BC848, BC849
VCEO
VCEO
VCEO
65
45
30
V
V
V
Emitter-Base Voltage BC846, BC847
BC848, BC849
VEBO
VEBO
6
5
V
V
Collector Current IC100 mA
Peak Collector Current ICM 200 mA
Peak Base Current IBM 200 mA
Peak Emitter Current –IEM 200 mA
Power Dissipation at TSB = 50 °C Ptot 3101) mW
Junction Temperature Tj150 °C
Storage Temperature Range TS–65 to +150 °C
1) Device on fiberglass substrate, see layout
BC846 THRU BC849
NPN Silicon Epitaxial Planar Transistors
for switching and AF amplifier applications.
Especially suited for automatic insertion in
thick- and thin-film circuits.
These transistors are subdivided into three
groups A, B and C according to their current gain. The
type BC846 is available in groups A and B, however, the
types BC847 and BC848 can be supplied in all three
groups. The BC849 is a low noise type available in groups
B and C. As complementary types, the PNP transistors
BC856... BC859 are recommended.
Marking code
Type Marking
BC846A
B
BC847A
B
C
1A
1B
1E
1F
1G
Type Marking
BC848A
B
C
BC849B
C
1J
1K
1L
2B
2C
pf3
pf4
pf5

Pré-visualização parcial do texto

Baixe Datasheet do transistor y1 (SMD) e outras Manuais, Projetos, Pesquisas em PDF para Eletrônica, somente na Docsity!

Dimensions in inches and (millimeters)

SOT-

.016 (0.4)

.056 (1.

)

.037(0.95) .037(0.95)

max. .004 (0.1)

.122 (3.1)

.016 (0.4) .016 (0.4)

3

1 2

Top View

.102 (2.6)

.007 (0.175) .045 (1.15)

.118 (3.0)

.052 (1.

)

.005 (0.125)

.094 (2.4)

.037 (0.95)

Case: SOT-23 Plastic Package Weight: approx. 0.008 g

MECHANICAL DATA

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Pin configuration 1 = Base, 2 = Emitter, 3 = Collector.

FEATURES

Small Signal Transistors (NPN)

5/

Symbol Value Unit

Collector-Base Voltage BC BC BC848, BC

VCBO VCBO VCBO

80 50 30

V V V

Collector-Emitter Voltage BC BC BC848, BC

VCES VCES VCES

80 50 30

V V V

Collector-Emitter Voltage BC BC BC848, BC

VCEO VCEO VCEO

65 45 30

V V V

Emitter-Base Voltage BC846, BC BC848, BC

VEBO VEBO

6 5

V V

Collector Current IC 100 mA

Peak Collector Current ICM 200 mA

Peak Base Current IBM 200 mA

Peak Emitter Current –IEM 200 mA

Power Dissipation at TSB = 50 °C Ptot 310 1)^ mW

Junction Temperature Tj 150 °C

Storage Temperature Range TS –65 to +150 °C

  1. (^) Device on fiberglass substrate, see layout

BC846 THRU BC

NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. Especially suited for automatic insertion in thick- and thin-film circuits. These transistors are subdivided into three groups A, B and C according to their current gain. The type BC846 is available in groups A and B, however, the types BC847 and BC848 can be supplied in all three groups. The BC849 is a low noise type available in groups B and C. As complementary types, the PNP transistors BC856...BC859 are recommended.

Marking code

Type Marking

BC846A B BC847A B C

1A 1B 1E 1F 1G

Type Marking

BC848A B C BC849B C

1J 1K 1L 2B 2C

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol Min. Typ. Max. Unit

h-Parameters at VCE = 5 V, IC = 2 mA, f = 1 kHz, Small Signal Current Gain Current Gain Group A B C Input Impedance Current Gain Group A B C Output Admittance Current Gain Group A B C Reverse Voltage Transfer Ratio Current Gain Group A B C

hfe hfe hfe hie hie hie hoe hoe hoe

hre hre hre

μS

μS

μS

DC Current Gain at VCE = 5 V, IC = 10 μA Current Gain Group A B C at VCE = 5 V, IC = 2 mA Current Gain Group A B C

hFE hFE hFE

hFE hFE hFE

Thermal Resistance Junction to Substrate Backside

RthSB – – 320 1)^ K/W

Thermal Resistance Junction to Ambient Air RthJA – – 450 1)^ K/W

Collector Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA

VCEsat VCEsat

mV mV

Base Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA

VBEsat VBEsat

mV mV

Base-Emitter Voltage at VCE = 5 V, IC = 2 mA at VCE = 5 V, IC = 10 mA

VBE

VBE

mV mV

Collector-Emitter Cutoff Current at VCE = 80 V BC at VCE = 50 V BC at VCE = 30 V BC848, BC at VCE = 80 V, Tj = 125 °C BC at VCE = 50 V, Tj = 125 °C BC at VCE = 30 V, Tj = 125 °C BC848, BC

ICES

ICES

ICES

ICES

ICES

ICES

nA nA nA μA μA μA

Gain-Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 100 MHz

fT – 300 – MHz

  1. (^) Device on fiberglass substrate, see layout

BC846 THRU BC

RATINGS AND CHARACTERISTIC CURVES BC846 THRU BC

www.s-manuals.com