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Datos Técnicos de Rectificadores de Tunneling 1N5820-1N5822 de Diodes Incorporated, Ejercicios de Electrónica

Los datos técnicos de los rectificadores de tunneling 1n5820-1n5822 fabricados por diodes incorporated. Se detallan sus características eléctricas, dimensiones, y datos mecánicos. Además, se incluyen gráficos que muestran la deriva de corriente en voltaje y la capacitancia total.

Tipo: Ejercicios

2012/2013

Subido el 12/10/2022

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DS23003 Rev. 8 - 2 1 of 2 1N5820-1N5822
www.diodes.com ãDiodes Incorporated
Features
1N5820 - 1N5822
3.0A SCHOTTKY BARRIER RECTIFIERS
DO-201AD
Dim Min Max
A25.40 ¾
B7.20 9.50
C1.20 1.30
D4.80 5.30
All Dimensions in mm
A
A
B
C
D
Maximum Ratings and Electrical Characteristics @ TA= 25°C unless otherwise specified
·Schottky Barrier Chip
·Guard Ring Die Construction for Transient Protection
·Low Power Loss, High Efficiency
·High Surge Capability
·High Current Capability and Low Forward Voltage Drop
·For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
·Lead Free Finish, RoHS Compliant (Note 4)
Mechanical Data
·Case: DO-201AD
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminals: Finish - Bright Tin. Plated Leads Solderable per
MIL-STD-202, Method 208
·Polarity: Cathode Band
·Mounting Position: Any
·Marking: Type Number
·Ordering Information: See Last Page
·Weight: 1.1 grams (approximate)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol 1N5820 1N5821 1N5822 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20 30 40 V
RMS Reverse Voltage VR(RMS) 14 21 28 V
Average Rectified Output Current
(Note 1) @ TL= 95°CIO3.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method) @ TL= 75°C
IFSM 80 A
Forward Voltage (Note 2) @ IF= 3.0A
@ IF= 9.4A VFM 0.475
0.850
0.500
0.900
0.525
0.950 V
Peak Reverse Current @ TA= 25°C
at Rated DC Blocking Voltage (Note 2) @ TA= 100°CIRM 2.0
20 mA
Typical Thermal Resistance (Note 3) RqJA 40 °C/W
RqJL 10
Operating and Storage Temperature Range Tj, TSTG -65 to +125 °C
Notes: 1. Measured at ambient temperature at a distance of 9.5mm from the case.
2. Short duration pulse test used to minimize self-heating effect.
3. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500" (12.7mm) lead length with 2.5 x 2.5" (63.5 x 63.5mm)
copper pad.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
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DS23003 Rev. 8 - 2 1 of 2 1N5820-1N

www.diodes.com ã Diodes Incorporated

Features

1N5820 - 1N

3.0A SCHOTTKY BARRIER RECTIFIERS

DO-201AD

Dim Min Max

A 25.40 ¾

B 7.20 9.

C 1.20 1.

D 4.80 5.

All Dimensions in mm

A B A

C

D

Maximum Ratings and Electrical Characteristics @ TA^ = 25°C unless otherwise specified

· Schottky Barrier Chip

· Guard Ring Die Construction for Transient Protection

· Low Power Loss, High Efficiency

· High Surge Capability

· High Current Capability and Low Forward Voltage Drop

· For Use in Low Voltage, High Frequency Inverters, Free

Wheeling, and Polarity Protection Application

· Lead Free Finish, RoHS Compliant (Note 4)

Mechanical Data

· Case: DO-201AD

· Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-

· Moisture Sensitivity: Level 1 per J-STD-020C

· Terminals: Finish - Bright Tin. Plated Leads Solderable per

MIL-STD-202, Method 208

· Polarity: Cathode Band

· Mounting Position: Any

· Marking: Type Number

· Ordering Information: See Last Page

· Weight: 1.1 grams (approximate)

Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic Symbol 1N5820 1N5821 1N5822 Unit

Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage

V RRM

V RWM

V R

20 30 40 V

RMS Reverse Voltage V (^) R(RMS) 14 21 28 V

Average Rectified Output Current (Note 1) @ TL = 95°C

I O 3.0 A

Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) @ TL = 75°C

I FSM 80 A

Forward Voltage (Note 2) @ I (^) F = 3.0A @ I (^) F = 9.4A

V FM 0.

V

Peak Reverse Current @ TA = 25 °C at Rated DC Blocking Voltage (Note 2) @ TA = 100°C

I RM

mA

Typical Thermal Resistance (Note 3)

RqJA 40 °C/W RqJL 10

Operating and Storage Temperature Range Tj, TSTG -65 to +125 °C

Notes: 1. Measured at ambient temperature at a distance of 9.5mm from the case.

  1. Short duration pulse test used to minimize self-heating effect.
  2. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500" (12.7mm) lead length with 2.5 x 2.5" (63.5 x 63.5mm) copper pad.
  3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, seeEU Directive Annex Notes 5 and 7.

Notes: 5. For packaging details, visit our website at http://www.diodes.com/datasheets/ap2008.pdf

DS23003 Rev. 8 - 2 2 of 2 1N5820-1N

www.diodes.com

I^

AVERAGE OUTPUT CURRENT (A)

(AV),

0

1

2

3

4

10 50 100 150

T , LEAD TEMPERATURE (ºC)

Fig. 1 Forward Current Derating Curve

L

Single Phase Half-Wave 60 Hz Resistive or Inductive Load 9.5mm Lead Length

10

100

1000

0.1 1.0 10 100

C , TOTAL CAPACITANCE (pF)

T

V , REVERSE VOLTAGE (V)

Fig. 4 Typical Total Capacitance

R

T = 25ºCj f = 1MHz V (^) sig= 50m Vp-p

0

20

40

60

80

100

1 10 100

I^

, PEAK FORWARD SURGE CURRENT (A)

FSM

NUMBER OF CYCLES AT 60 Hz Fig. 3 Peak Forward Surge Current

8.3ms Single Half Sine-Wave JEDEC Method T (^) J = TJ(max)

10

30

0.1 0.3 0.5 0.7 0.9 1.

I , INSTANTANEOUS FORWARD CURRENT (A)F

V , INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Voltage Characteristics

F

Device Packaging Shipping

1N5820-B DO-201AD 500 Bulk

1N5820-T DO-201AD 1.2K/Tape & Reel, 13-inch 1N5821-B (^) DO-201AD 500 Bulk

1N5821-T DO-201AD 1.2K/Tape & Reel, 13-inch

1N5822-B DO-201AD 500 Bulk

1N5822-T DO-201AD 1.2K/Tape & Reel, 13-inch

Ordering Information (Note 5)