SILICON NITRIDE-
Sİ₃N₄
MECH562:MICRO AND NANOFABRICATION
Group 5
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Silicon Nitride (Si3N4): A Versatile Ceramic Material for Advanced Applications, Lecture notes of Nanomaterial Engineering
A comprehensive overview of silicon nitride (si3n4), a ceramic material with exceptional properties and a wide range of applications. It covers the history of si3n4, its unique physical and chemical properties, various fabrication techniques, and its utilization in diverse industries. The document delves into the material's low density, high fracture toughness, excellent thermal stability, and resistance to oxidation, making it an ideal choice for advanced applications. It explores the use of si3n4 in microelectromechanical systems (mems), the semiconductor industry, and the biomedical field, highlighting its versatility and potential for future technological advancements. The comprehensive information provided in this document can be valuable for students, researchers, and professionals working in materials science, engineering, and related disciplines.
Typology: Lecture notes
2022/2023
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SILICON NITRIDE-
Sİ₃N₄
MECH562:MICRO AND NANOFABRICATION Group 5
OUTLINE
History
01 Properties 02 Fabrication Techniques 03 Applications 04
1857 The first synthesis of silicon nitride was reported. 1879 Si₃N₄ was created by heating silicon with carbon (often called brasque) in a blast furnace. 1910 silicon was heated in an atmosphere of pure nitrogen to produce Si₃N₄. 1948- 1952 Si₃N₄ was used for high-temperature applications like thermocouple tubes, rocket nozzles, and crucibles. 1950s efforts to use silicon nitride for high-temperature gas turbine parts led to the development of reaction-bonded and hot- pressed silicon nitride. 1970s two ceramic gas turbines using silicon nitride were developed. After 1990s Si₃N₄ began to be used in many orthopedic applications such as prostheses and bone implants.
History
01
5 Properties Very low density (3.21 g/cm3) Very high fracture toughness ( MPam1/2) Good flexural strength ( MPa) Very good thermal shock resistance Maximum operating temperature in an oxidizing atmosphere: 1,300°C Maximum operating temperature in a neutral atmosphere: 1,600°C
Properties
02
Fabrication Techniques 1)Silicon nitride As a Layer On Silicon (^) Oxidation Resistance (^) Diffusion Barrier (^) Strength and Durability (^) Resistance to Etchants (^) Electrical Insulation (^) High-Temperature Stability Fabrication Techniques 03 Fig4-[3]
Fabrication Techniques
- Thin Film Deposition (^) Low Pressure Chemical Vapor Deposition (LPCVD) (^) Atomic Layer Deposition (PEALD)Resist ance to Etchants Fabrication Techniques 03 lnf-wiki.eecs.umich.edu Fig1-[4]
Applications
- Semiconductor Industry (^) Passivation Layer (^) Dielectric Material (^) Film Deposition (^) Etch Mask Application s 04 Fig2-[1]
Applications
- Biomedical Industry (^) Fabrication of microscale implants and biosensors (^) Potential for lab-on- chip devices for diagnostics and therapeutic applications Application s 04 Fig4-[2]
13 REFERENCES
- (^) Purwins, Hendrik & Nagi, Ahmed & Barak, Bernd & Hockele, Uwe & Kyek, Andreas & Lenz, Benjamin & Pfeifer, Gunter & Weinzierl, Kurt. (2011). Regression methods for prediction of PECVD Silicon Nitride layer thickness.
- (^) Heimann, R.B. Silicon Nitride, a Close to Ideal Ceramic Material for Medical Application. Ceramics 2021, 4, 208-223.
- (^) Madeleine Nilsen et al 2019 J. Micromech. Microeng. 29 025014
- (^) Kim, Soong & Cha, Byeong Jun & Saqlain, Shahid & Seo, Hyun Ook & Kim, Young. (2019). Atomic Layer Deposition for Preparation of Highly Efficient Catalysts for Dry Reforming of Methane. Catalysts. 9. 266. 10.3390/catal9030266.