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An introduction to semiconductor physics, focusing on the electrical characteristics of non-ohmic devices. It begins by discussing the basic concepts of electromagnetism, including electric force, electric field, and coulomb's law. The document then applies these concepts to the simplest atom, hydrogen, and provides an example problem to illustrate the principles. Valuable for students studying semiconductor physics and related fields, as it provides a foundation for understanding the behavior of semiconductor devices.
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To describe the electrical characteristics of non-ohmic devices such as p-n junction diode, rectifying diode, Zener diodes, tunnel diode, photodiode, solar cell, light-emitting diode (LED), field-effect transistor (FET), junction field-effect transistor (JFET), metal-oxide semiconductor transistor (MOSFET), bipolar junction transistor (BJT), Shottky diode, PIN devices, semiconductor lasers and hetereojunctions we’ll need an understanding of some basic concepts in electromagnetism. Consider an abrupt pn junction; Fig. 5.1 An Introduction to Semiconductor Devices, D. Neamen Without illumination, the following IV characteristics are observed at the pn junction providing no turn-on voltage is required. The quantity J is the current density, I/A. This an example of a non-ohmic device. Fig. 9.12 An Introduction to Semiconductor Devices, D. Neamen
Fig. 5.2 An Introduction to Semiconductor Devices, D. Neamen Fig. 5.3 An Introduction to Semiconductor Devices, D. Neamen SOME CONCEPTS IN ELECTROMAGNETISM To help describe the electrical characteristics of semiconductors and other materials , we’ll review some introductory concepts in classical electromagnetism.
Consider two point charges q 1 and q 2 separated by a distance r; q 1 q 2 O ← r → O The electric force between the charges is described by Coulomb’s Law; → l F l= _1 l q 1 q 2 l where 1/4πε o = 8.988 x 10^9 N-m^2 /C^2 4πε o r^2 and c = (ε o μ o)-1/2^ so ε o = 8.854 x 10-^12 C^2 /N-m^2. The direction of the force is attractive or repulsive depending on the ‘sign’ of the charges…and acts along the line joining the centers of the charges. This is an inverse square law…that is the force varies inversely with the distance r. Sketch a graph of the magnitude of F vs. r; F r For several point charges, the net force on any one is the vector sum of the forces acting on that charge; → → → → → F 1 = F 12 + F 13 + F 14 + …+ F 1n. → → The electric force F and electric field E are related. Imagine each charge sets up an electric field around it and this field interacts with other charges. The idea of a field is used to explain ‘action at a distance’….how charges can interact with each other over a distance without any direct contact.
To visualize the electric field we imagine a single + point charge q has field lines radiating outwards…t his is consistent with experimental observations about the behavior of charges interacting with a point charge; О → E is strongest where the field lines are close together near the point charge and weaker farther away from the charge…the density of the field lines is proportional to the magnitude of the field. By convention, electric field lines are drawn in the direction a + charge would be ‘forced’. We can use the force on a + test charge to gauge the magnitude and direction of the electric field. Let’s place a 1 C test charge q o at a distance r from q; О r o → The force on qo due to q is l F l= _1 l q qo l acting radially outwards. 4πε o r^2 At this point in space the electric field causes a force of _1 l q l N 4πε o r^2