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NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T a =25°C unless otherwise noted
Electrical Characteristics T a=25°C unless otherwise noted
hFE Classification
Symbol Parameter Value Units VCBO Collector-Base Voltage : BC : BC547/ : BC548/
V
V
V
VCEO Collector-Emitter Voltage : BC : BC547/ : BC548/
V
V
V
VEBO Emitter-Base Voltage : BC546/ : BC548/549/
V
V
IC Collector Current (DC) 100 mA PC Collector Power Dissipation 500 mW T (^) J Junction Temperature 150 °C T (^) STG Storage Temperature -65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current V (^) CB =30V, I (^) E=0 15 nA h (^) FE DC Current Gain V (^) CE =5V, I (^) C=2mA 110 800 VCE (sat) Collector-Emitter Saturation Voltage I (^) C=10mA, I (^) B =0.5mA I (^) C=100mA, I (^) B =5mA
mV mV VBE (sat) Base-Emitter Saturation Voltage I (^) C=10mA, I (^) B =0.5mA I (^) C=100mA, I (^) B =5mA
mV mV VBE (on) Base-Emitter On Voltage V (^) CE =5V, I (^) C=2mA V (^) CE =5V, I (^) C=10mA
mV mV fT Current Gain Bandwidth Product V (^) CE =5V, I (^) C=10mA, f=100MHz 300 MHz C (^) ob Output Capacitance V (^) CB =10V, I (^) E=0, f=1MHz 3.5 6 pF C (^) ib Input Capacitance V (^) EB =0.5V, IC =0, f=1MHz 9 pF NF Noise Figure : BC546/547/ : BC549/ : BC : BC
V (^) CE =5V, I (^) C=200μA f=1KHz, R (^) G=2KΩ V (^) CE =5V, I (^) C=200μA R (^) G=2KΩ, f=30~15000MHz
dB dB dB dB
Classification A B C h (^) FE 110 ~ 220 200 ~ 450 420 ~ 800
BC546/547/548/549/
Switching and Applications
- High Voltage: BC546, V (^) CEO=65V
- Low Noise: BC549, BC
- Complement to BC556 ... BC
- Collector 2. Base 3. Emitter
1 TO-
Typical Characteristics
Figure 1. Static Characteristic Figure 2. Transfer Characteristic
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 5. Output Capacitance Figure 6. Current Gain Bandwidth Product
(^00 2 4 6 8 10 12 14 16 18 )
20
40
60
80
100
IB = 50μA
IB = 100μA
IB = 150μA
IB = 200μA
IB = 250μA
IB = 300μA
IB = 350μA
IB = 400μA
I[mA], COLLECTOR CURRENTC^
VCE [V], COLLECTOR-EMITTER VOLTAGE
0.0 0.2 0.4 0.6 0.8 1.0 1. 0.
1
10
100 VCE = 5V
I^ [mA], COLLECTOR CURRENTC
V BE [V], BASE-EMITTER VOLTAGE
(^11 10 100 )
10
100
1000
VCE = 5V
hFE
, DC CURRENT GAIN
I C [mA], COLLECTOR CURRENT
(^101 10 100 )
100
1000
10000 I (^) C = 10 IB
V (^) CE(sat)
V (^) BE (sat)
VBE
(sat), V
CE (sat)[mV], SATURATION VOLTAGE
I (^) C [A], COLLECTOR CURRENT
1 10 100 1000 0.
1
10
100
f=1MHz I (^) E = 0
C [pF], CAPACITANCEob
V (^) CB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10 100 1
10
100
1000 VCE = 5V
f^ , CURRENT GAIN-BANDWIDTH PRODUCTT
I (^) C [mA], COLLECTOR CURRENT
©2002 Fairchild Semiconductor Corporation Rev. I
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
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